Navitas Semiconductor has officially secured the prestigious ALATTIS program contract from the U.S. Army. This competitive selection emphasizes the company’s defense-grade reliability and its capability to engineer next-generation 10-kilovolt silicon carbide power semiconductors.
Sponsored by the Army Research Laboratory, the prototype initiative aims to establish a secure domestic manufacturing ecosystem. It focuses directly on advancing ultra-high-voltage hardware for critical defense and infrastructure applications. You can learn more about related innovations by exploring our optics articles.
Advancing Ultra-High-Voltage Capabilities
The core objective of the ALATTIS program is to design, fabricate, and thoroughly test insulated-gate bipolar transistors. These components will work alongside specialized PiN diode technologies to handle extreme electrical loads.
Engineering Robust Defense Hardware
Navitas will apply its proprietary trench-assisted planar architecture to validate this novel manufacturing methodology. Iterative testing cycles will ensure that the final 10 kV devices meet stringent military standards.
The project draws upon more than twenty years of ultra-high-voltage silicon carbide research. Past achievements include pioneering 6.5 kV MOSFETs and early high-voltage diode structures.
Strengthening Domestic Supply Chains
Establishing a domestic production pipeline for 10 kV semiconductors protects national security interests. It ensures that mission-critical systems rely on trusted, locally manufactured hardware components.
Future Implications for Power Electronics
Supported by the Joint Experimentation and Technology Accelerator, this initiative pushes the boundaries of modern high-power electronics. Successful execution will pave the way for broader deployment across military and civilian sectors.
Navitas intends to leverage this momentum to expand its technological dominance. To stay updated on similar technological breakthroughs, check out our latest optics news coverage.
Core Innovations and Architecture
The initiative relies heavily on several key engineering components:
- 10 kV IGBTs: Designed to manage immense voltage levels safely.
- PiN Diodes: Integrated to support efficient high-power rectification.
- TAP Architecture: Utilizes a specialized trench-assisted planar layout for optimal performance.
Ultimately, this contract cements the company’s status as a leader in power semiconductor innovation. Further details on advanced component testing can be found via our product reviews.
Here is the source article for this story: The U.S. Army chose Navitas to develop 10,000-volt devices for military systems.
